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www.irf.com 1 03/27/08 irfi4229pbf notes through are on page 8 description hexfet ? power mosfet

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features advanced process technology key parameters optimized for pdp sustain, energy recovery and pass switch applications low e pulse rating to reduce power dissipation in pdp sustain, energy recovery and pass switch applications low q g for fast response high repetitive peak current capability for reliable operation short fall & rise times for fast switching 150c operating junction temperature for improved ruggedness repetitive avalanche capability for robustness and reliability s d g gds gate drain source d s d g to-220ab full-pak absolute maximum ratings parameter units v gs gate-to-source voltage v i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current i rp @ t c = 100c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.73 c/w r ja j unc ti on- t o- a m bi en t ??? 65 32 300 -40 to + 150 10lb in (1.1n m) 46 18 0.37 max. 12 72 19 30 v ds max 250 v v ds (avalanche) typ. 300 v r ds(on) typ. @ 10v 38 m i rp max @ t c = 100c 32 a t j max 150 c key parameters

2 www.irf.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 250 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 340 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 38 46 m ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -12 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 200 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 g fs forward transconductance 26 ??? ??? s q g total gate charge ??? 73 110 nc q gd gate-to-drain charge ??? 24 ??? t d(on) turn-on delay time ??? 18 ??? t r rise time ??? 17 ??? ns t d(off) turn-off delay time ??? 32 ??? t f fall time ??? 13 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j c iss input capacitance ??? 4480 ??? c oss output capacitance ??? 400 ??? pf c rss reverse transfer capacitance ??? 100 ??? c oss eff. effective output capacitance ??? 270 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package avalanche characteristics parameter units e as single pulse avalanche energy mj e ar repetitive avalanche energy mj v ds(avalanche) repetitive avalanche voltage v i as avalanche current a diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current ??? ??? 18 (body diode) a i sm pulsed source current ??? ??? 72 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 120 180 ns q rr reverse recovery charge ??? 540 810 nc ??? 770 ??? ??? 1380 ??? 4.6 11 ??? ??? 300 ??? typ. max. ? = 1.0mhz, ??? 110 t j = 25c, i f = 11a, v dd = 50v di/dt = 100a/s t j = 25c, i s = 11a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 11a v ds = v gs , i d = 250a v ds = 250v, v gs = 0v v gs = 0v, v ds = 0v to 200v v ds = 250v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 0v l = 220nh, c= 0.3f, v gs = 15v mosfet symbol v ds = 25v, i d = 11a v dd = 125v, i d = 11a, v gs = 10v conditions and center of die contact v dd = 200v, v gs = 15v, r g = 5.1 ? v ds = 200v, r g = 5.1 ?, t j = 25c l = 220nh, c= 0.3f, v gs = 15v v ds = 200v, r g = 5.1 ?, t j = 100c v ds = 25v v dd = 125v, v gs = 10v i d = 11a r g = 2.4 ? see fig. 22
www.irf.com 3 fig 6. typical e pulse vs. drain current fig 5. typical e pulse vs. drain-to-source voltage fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 11a v gs = 10v 140 150 160 170 180 190 200 210 v ds, drain-to-source voltage (v) 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.3f 100c 25c 100 110 120 130 140 150 160 170 i d , peak drain current (a) 0 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c = variable 100c 25c
4 www.irf.com fig 11. maximum drain current vs. case temperature fig 8. typical source-drain diode forward voltage fig 12. maximum safe operating area fig 7. typical e pulse vs.temperature fig 10. typical gate charge vs.gate-to-source voltage fig 9. typical capacitance vs.drain-to-source voltage 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050607080 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v v ds = 50v i d = 11a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec 20 40 60 80 100 120 140 160 temperature (c) 0 200 400 600 800 1000 1200 1400 1600 1800 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.3f c = 0.2f c = 0.1f 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 18 20 i d , d r a i n c u r r e n t ( a )
www.irf.com 5 fig 17. maximum effective transient thermal impedance, junction-to-case fig 15. threshold voltage vs. temperature fig 14. maximum avalanche energy vs. temperature fig 13. on-resistance vs. gate voltage fig 16. typical repetitive peak current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 case temperature (c) 0 10 20 30 40 50 60 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave square pulse 5 6 7 8 9 10 v gs, gate -to -source voltage (v) 0 20 40 60 80 100 120 140 160 180 200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 11a t j = 25c t j = 125c 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.3671 0.000287 1.0580 0.162897 1.3076 2.426 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.3a 2.7a bottom 11a
6 www.irf.com fig 18. for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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# $$ ? !"!!%" fig 19b. unclamped inductive waveforms fig 19a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 20a. gate charge test circuit fig 20b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l
www.irf.com 7 fig 21a. t st and e pulse test circuit fig 21b. t st test waveforms fig 21c. e pulse test waveforms driver dut l c vcc rg rg b a ipulse fig 22a. switching time test circuit fig 22b. switching time waveforms &' 1 (
# 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f
8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/08
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.9mh, r g = 25 ? , i as = 11a. pulse width 400s; duty cycle 2%. r is measured at
half sine wave with duty cycle = 0.25, ton=1sec. to-220ab full-pak packages are not recommended for surface mount application.

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